HHGrace is one of the leaders providing embedded Non-Volatile Memory foundry solutions. HHGrace’s eNVM family with a broad of applications including smart card, MCU and SoC, consists of eFlash solution with high density and fast program/erase time, eEEPROM solution with excellent endurance, logic-compatible and cost-effective eOTP/eMTP solutions.

0.25μm~0.13μm eFlash

- Two sets of embedded Non-Volatile Flash Memory technology platforms:

- Self-aligned split-gate technology at 0.25μm, 0.18μm, and 0.13μm

- SONOS technology at 0.13μm

- Providing the most competitive flash IP macros with high reliability and 100 years of data retention after 300K endurance, proven in high-volume mass production, and customizable to meet the specific requirements for high speed, low power and cost-effective solutions

For touch control application, HHGrace provides an innovative single chip solution - 0.13μm eFlash+HV platform. With HV CMOS (32V) devices built on top of mature 0.13μm eFlash process, the existing libraries and IPs are fully compatible, including embedded Flash/EEPROM IPs in full density range, SRAM, a complete set of analog IPs, high performance I/O library and low power standard cell library. With tens of thousands of wafers shipped, the platform has been widely recognized in the industry.

0.35μm~0.13μm eEEPROM

- Three sets of embedded EEPROM technology platforms:

- Self-aligned split-gate technology at 0.13μm and 90nm

- SONOS technology at 0.13μm

- Split-gate technology at 0.5μm FEOL and 0.35μm/0.25μm BEOL

As the leading wafer foundry producing smart card ICs, HHGrace’s end products range from SIM card, U-key, social security card, ID card and bank card to a variety of security ICs.

0.5μm~0.13μm eOTP/eMTP/eLogicEE

- Comprehensive and cost-effective solutions for entry-level 8-bit MCU applications

- 5V and 3.3V single-gate platforms providing high C/P ratio

- Widely used for various MCUs such as battery, remote control and toys

Comprehensive IP portfolio and highly experienced IP design team helping customers accelerate time to market with high-performance and low-power IPs.

HHGrace offers standard logic and mixed-signal technology platforms from 0.5μm to 90nm , and their shrink nodes including 0.162μm, 0.153μm (shrink of 0.18μm) and 0.115μm (shrink of 0.13μm).

90nm Low Power Logic and Mixed-Signal

- 1.5V low power core transistor with similar raw gate density of industry 90nm

- Single poly, up to seven layers of metal (Aluminum) interconnects

- The high-density library providing a cost-effective solution in low-power design optimization

- Hi-Rsh poly resistor, MIM capacitor and other device options

0.13μm and Shrink Standard Logic and Mixed-Signal

- Single poly, up to seven layers of metal (Aluminum) interconnects

- 1.2V generic and 1.5V low power core transistors with high-density library and diversified process features

- Standard threshold voltage (Vt) and multi Vt options

- Hi-Rsh poly resistor, MIM capacitor and other device options

0.18μm and Shrink Standard Logic and Mixed-Signal

- Single poly, up to six layers of metal (Aluminum) interconnects

- 1.8V generic and 1.8V low power core transistors with high-density library and diversified process features

- Standard threshold voltage (Vt) and multi Vt options

- Hi-Rsh poly resistor, MIM capacitor and other device options

- Board range of IP supported, including OTP/MTP, common used analog and interface IPs

0.5μm 5V and 0.18μm 3.3V, 5V Mixed-Signal

- Single poly, up to four layers of metal (Aluminum) interconnects

- Competitive mask layers and tight design rules

- Hi-Rsh poly resistor, MIM capacitor, thick top metal, OTP/MTP and other device options

HHGrace provides variety of silicon process solutions for RF ICs in wireless communication and wired optical communications, including SiGe Bipolar/BiCMOS, RF LDMOS, logic-compatible RF CMOS and SOI (silicon on insulator) RF CMOS.

0.13μm/0.18μm SiGe Bipolar/BiCMOS

- The innovative HBT (hetero junction bipolar transistor) structure providing high performance and effective cost for RF solutions, with more than 400 patent applications

- Various options, outstanding performance and continuous development plan to support flexible designs

- High precision models and complete design kits for flexible design-in

- Tailor-made solutions to optimize performance and power efficiency

0.13μm RF CMOS

- Compatible with 0.13μm generic logic process

- Single poly, up to seven layers of metal (Aluminum) interconnects

- Standard threshold voltage (Vt) and multi Vt options

- Hi-Rsh poly resistor, MIM capacitor, varactors, thick-top-metal inductor and other device options/li>

- Fully scalable design kits for flexible design-in

0.18μm RF CMOS

- Compatible with 0.18μm generic logic process

- Single poly, up to six layers of metal (Aluminum) interconnects

- Standard threshold voltage (Vt) and multi Vt options

- Hi-Rsh poly resistor, MIM capacitor, varactors, thick-top-metal inductor and other device options

- Fully scalable design kits for flexible design-in

0.2μm SOI RF CMOS

- Tailored and optimized for wireless RF front-end

- Provides a 2.5V device with lower switch insertion loss, higher isolation and better linearity

- Provides convenience to designers who focus on optimizing both the RF performance and die size with PDK offering

- Provides PSP model

HHGrace offers an advanced process platform for power management IC including BCD (Bipolar, CMOS and DMOS) and CDMOS process. The BCD/CDMOS process based on HHGrace’s mature CMOS platform can be widely used in different fields such as audio amplifier, indoor and outdoor lighting, power management, industrial control and automotive electronics particularly for DC-DC converters, AC-DC converters, LED lighting and battery management products.

0.35μm BCD (BCD350G/BCD350GE)

- Based on 0.35µm 5V CMOS process, providing high performance BJT and LDMOS with Vgs both 5V & 12V and Vds up to 40V

- Up to four layers of metal interconnects and variety of options including High-Rsh poly resistor, Low-TC poly resistor, MIP capacitor, Schottky diode, Low-TC Zener diode, JFET, 5V/20V/40V depletion NMOS, Low-Vcesat BJT, thick top metal and OTP

- Digital library and fully scalable design kits for flexible design-in

- BCD350GE with enhanced performance and more effective cost by Rdson improvement and mask layers reduction on mature BCD350G

0.18μm BCD (BCD180G)

- Based on 0.18µm 1.8V/5V industry-compatible CMOS process, providing high performance BJT and LDMOS with Vgs 5V and Vds up to 40V

- Up to six layers of metal interconnects and variety of options including High-Rsh poly resistor, Low-TC poly resistor, MIM capacitor, Schottky diode, Low-TC Zener diode, JFET, 5V/20V/40V depletion NMOS, Low Vcesat BJT, thick top metal and OTP/MTP

- Digital library and fully scalable design kits for flexible design-in

0.35μm CDMOS (PMU350G)

- Based on 0.35µm 3.3V/5V CMOS process, providing high performance BJT and LDMOS with Vgs 5V and Vds up to 40V

- Up to four layers of metal interconnections and variety of options including High-Rsh poly resistor, Low-TC poly resistor, MIP capacitor, Low-TC Zener diode, JFET, 5V/20V/40V depletion NMOS, Low Vcesat BJT, thick top metal and OTP

- Digital library and fully scalable design kits for flexible design-in

0.13μm CDMOS

- Based on 0.13µm 1.8V/5V CMOS process, providing high performance LDMOS with Vgs both 5V & 12V and Vds up to 40V

Up to five layers of metal interconnects and variety of options including Hi-Rsh poly resistor, MIM Capacitor, HV BJT, Zener diode and thick top metal

- High reliability eFlash/eEEPROM with more than 10 years data retention and over 200k endurance

- Competitive Rdson with the advantage of chip size reduction

- Digital library, fully scalable design kits, analog and interface IPs for flexible design-in

1μm 700V CDMOS (BCD 700V)

- Based on 1µm 6V CMOS process, providing high performance LDMOS with Vgs 6V and Vds 40V/120V/700V

- Integrated 700V MOSFET, competitive Rdson with the advantage of chip size reduction

- Flexible modular process with related design kit for customers’ layout design, and reduce design cycle

- Rich options of HV JEFT, high-Rsh poly resistor, capacity and Zener diode for flexible design-in

0.8um 5V/40V HVCMOS

- 5V/40V gate voltage, providing 5VCMOS and 40V symmetric and asymmetric structure HVCMOS

- Optional isolation 30V NMOSFET can be used for H-bridged driver

- Offer flexible modular process with design kit, convenient for customers’ layout design, and reduce design cycle

- Rich options of HRPoly ,MIP ,Burried Zener ,Poly fuse, flexible design

- About stable 10 thousands wafer shipment, widely applied for driven of display, PMW and PFC controller of SMPS, LED lighting driver IC

0.5μm/0.35μm 5V CMOS (CZ6H+/CZ6L+) & 0.35μm 7V CMOS (CZ6-7V)

- CZ6H+/CZ6L+ is one of HHGrace's most mature analog process platforms, with more than 10 years experience of mass production. As a result, plenty of IPs is silicon proven. It inherits stable characteristics of logic device, and also offers various options for analog circuit design

- CZ6-7V was another analog technology platform especially for 7V operating voltage, which targeted at product applications of power management chips like low/medium voltage audio amplifier LDO, DC/DC

0.18μm 5V CMOS

- Single poly, up to four layers of metal interconnects

- Competitive mask layers and tight design rules

- Hi-Rsh poly resistor, MIM capacitor, thick top metal, OTP/MTP and other device options