Tower Semiconductor’s 180nm Power Management modular technology platform offers advanced performance, efficiency, design and footprint optimization for a wide range of operating voltages. The platform offers high levels of functional integration including: wide range of memories, high density 1.8V and 5V libraries and advance power LDMOS,  making it highly suitable for a  variety of applications such as: mobile, wearable, industrial and automotive.  A state of the art PDK (TS18PM) enables the option to reuse circuits with different isolation schemes and LDMOS types, allowing the highest level of confidence in silicon success, fast time to market as well as an efficient, cost and time saving design cycle. 

 PLATFORM FEATURES: 

- Tower Semiconductor’s 0.18µm, 8” power management platform has been in production for more than ten years.

- Over 100 devices to best fit any power management design including CMOS, LDMOS, Resistors, BJT, Capacitors and more. 

- Scalable  LDMOS in the PDK for optimized area.

- 1.8V/5V & 5V-only options.

- Ultra-low Rdson LDMOS from 5V to 200V: 8V~42V Gen4, 42V~140V RESURF, Drain Isolated LDMOS and 200V LDMOS.

- Low Qgd LDMOS with high efficiency above 1.5MHz switching.

- Top thick Al & Cu options.

- Smart ESD tools and post layout checks.

-  Rich IP portfolio including eNVM OTP & MTP up to 256kbit, SRAM, ROM.

- An aggressive development roadmap offers customers continued leadership in the power IC market.

- The TS18PM process is manufactured in two worldwide sites

Power Management Markets Served

Power technologies available at Tower Semiconductor serve a wide range of markets from mobile, computer and other consumer markets to automotive, industrial and power restricted wearables. Tower Semiconductor offers solutions that enable high integration of the most sophisticated power controls and best in class efficiency for end products to achieve the always needed higher power ratings.

65nm BCD process is leading the low voltage market segment with the highest power efficiency, best digital integration capability and superior cost effectiveness through both the smallest die size and low mask count.

    The platform provides significant material competitive advantages for any type of power management chip up to 16V operation regardless of application, including a wide variety of products such as: PMICs, load switches, DC-DC converters, LED drivers, motor drivers, battery management, analog and digital controllers, and more. 

    The process includes four leading edge power LDMOS transistors: 5V, 7V, 12V and 16V operation, each with the best available Rdson and Qgd parameters. In addition, multiple chips can be integrated to a single monolithic IC solution replacing a multiple chip module for an improved system cost structure and system performance.

    Tower Semiconductor’s power transistors are fully isolated to withstand high currents, all with an ultra-low Rdson, e.g. less than 1mΩ*mm² for the 5V LDMOS. For products which operate at the megahertz (MHz) switching frequencies, the 65nm BCD power transistors benefit from a very low Qgd down to 2.3mΩ*nC. In addition, very low metal resistance is achieved using a single or dual 3.3um top thick copper. The 65nm BCD also offers aggressive 113Kgate/mm² 5V digital density and an 800Kgate/mm² 1.2V digital library.

Power Management Markets Served

Power technologies available at Tower Semiconductor serve a wide range of markets from mobile, computer and other consumer markets to automotive, industrial and power restricted wearables. Tower Semiconductor offers solutions that enable high integration of the most sophisticated power controls and best in class efficiency for end products to achieve the always needed higher power ratings.

PLATFORM FEATURES: 

• - Ultra low Rdson: industry-best sub 1mΩ*mm² Rdson for 12V BVDSS.

• - Low mask count.

• - 4 LDMOS devices 5V, 7V, 12V and 16V operation, all with ultra low Rdson.  Roadmap up to 30V operation.

• - Single and dual 3.3um top thick copper to allow low metal resistance and high currents.

• - 45V floating capability.

• - Low Qgd performance offering advanced power efficiency for fast switching converters (MHz).

• - Aggressive 5V digital library with high digital density and 1.2V digital library with just three additional production layers.

• - High quality facility with advanced metro-logy and fast cycle time.

• - Technology fit for a wide variety of products such as PMIC, load switches, DC-DC converters, LED drivers, motor drivers, battery management, analog and digital controllers and more.

• - Automotive market qualified (IATF 16949).

Tower Semiconductor offers a large spectrum of MS/CMOS technologies from 0.5μm down to 45nm for a wide variety of digital, analog, Mixed Signal, RFCMOS and automotive applications.

    With highly customizable processes, a world-renowned modeling kit and best-in-class PDKs, a rich-set of digital and analog IP libraries, Tower Semiconductor enables maximum performance, cost-effectiveness and fast time to market for a variety of markets: consumer, audio solutions, time controllers, WiFi/WiMax, Internet of Things (IoT) and low power, among others.

MS/CMOS Market Served

Tower Semiconductor’s worldwide recognized leadership in CMOS image sensors and pixel technology is derived from its vast experience and proven ability to supply sensors with best-in-class performance, customized to product and application needs. We provide our customers with high end, state of the art imaging solutions as well as unique customization processes enabling unmatched pixel design flexibility. The company’s extensive expertise in the imaging field combined with in-house CIS technology development enables Tower Semiconductor to meet the market’s rigorous requirements for leading-edge performance, advanced features and reduced die size. 

    Tower Semiconductor’s long-term investment in R&D and technical support keeps it at the cutting edge of CIS technology. By choosing Tower Semiconductor’s mature process, customers benefit from skilled experts who work to customize designs and provide rich solutions to meet their requirements and project needs.

Tower Semiconductor’s CIS technology is offered on three different platforms:

- 8” wafers, 180nm with aluminum backend ⁽¹⁾

- 8” wafers, 110nm with copper backend

- 12” wafers, 65nm with copper backend ^{(1), (2)}

(1) Stitching technology is currently available on 180nm and 65nm platforms (both two-mask and one-mask stitching) and soon will be also available on 110nm platform.

(2) On 65nm platform, our unique dual light pipe for high QE and high shutter efficiency (for global shutter pixels) is available

Power Management Markets Served

 The Tower Semiconductor RF-SOI switch process family combines a 3–6 metal layer CMOS process with options for 1.2, 1.8, 2.5V, 3.3V, and 5V transistors. The technology offering, with three generations in high volume manufacturing, is further enhanced by silicon proven accurate models and design libraries, and world-class design enablement.  

    These processes are well-suited for products requiring isolation such as cellular switches. Excellent channel isolation better than >-40 dBm, insertion loss of <0.35 dB, low harmonics of better than 105dBc at cellular power levels and inter-modulation distortion below -117 dBm have been demonstrated.  Low noise amplifiers can also be integrated with optimized low-noise, high-gain devices and low-loss inductors realized with thick Cu or Al layers.

    In addition to the active devices, process options include silicided and unsilicided poly resistors, RF metal-insulator-metal (MIM) capacitors, metal-fringe capacitors (MFCs), scalable geometry inductors, fixed geometry inductors, fixed geometry baluns, and transformers.

    Substrate options include “thin-film” for the best Ron-Coff performance and “thick-film” for bulk-like behavior of the active MOSFETs, free of floating body effects.

PLATFORM FEATURES:

- Sub-100fs Ron-Coff 2.5V NMOS

- Low RF noise devices for RF switch + LNA integration

- High density (4fF/µm2) and high voltage (>25V) MIM capacitors.  High-linearity metal fringe  capacitors 

- Low value and high value resistors, RF varactor, High-Q inductors

- High impedance, highly linear SOI substrate

- BSIM4 SOI and PSP models

- Al or Cu low RC metallization

- Support for 1.2, 2.5, 3.3, or 5V

- High utilization standard cell library

- Optional high power handling device

- Highly accurate RF device models and fast parasitic extraction

- Advanced substrate models 

RF-SOI Markets Served